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| BUF7216 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Silicon NPN High Voltage Switching Transistor | |||
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BUF7216
Vishay Telefunken
Electrical Characteristics
Tcase = 25°C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
Collector-emitter
breakdown voltage (figure 1)
Emitter cut-off current
Collector-emitter
saturation voltage
Base-emitter saturation voltage
DC forward current transfer ratio
Dynamic saturation voltage
VCES = 1600 V
VCES = 1600 V; Tcase = 125°C
VCBO = 1600 V
VCBO = 1600 V; Tcase = 125°C
IC = 300 mA; L = 125 mH;
Imeasure = 100 mA
VEB = 11 V
IC = 0.35 A; IB = 85 mA
IC = 1 A; IB = 0.35 A
IC = 0.35 A; IB = 85 mA
IC = 1 A; IB = 0.35 A
VCE = 2 V; IC = 10 mA
VCE = 2 V; IC = 0.4 A
VCE = 2 V; IC = 1 A
VCE = 5 V; IC = 2 A
IC = 1 A; IB = 0.35 A; t = 1 ms
IC = 1 A; IB = 0.35 A; t = 3 ms
Symbol Min Typ Max Unit
ICES
100 mA
ICES
ICBO
1 mA
100 mA
ICBO
1 mA
V(BR)CEO 800
V
IEBO
1 mA
VCEsat
0.35 0.6 V
VCEsat
1.2 V
VBEsat
1V
VBEsat
1.1 V
hFE
15
hFE
15
hFE
7
hFE
4
VCEsatdyn
10 15 V
VCEsatdyn
7 10 V
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2 (8)
Document Number 86520
Rev. 1, 20âJanâ99
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