BUF644 Datasheet, PDF (3/9 Pages) Vishay Siliconix – Silicon NPN High Voltage Switching Transistor

BUF644
Vishay Telefunken
Switching Characteristics
T_case = 25°C, unless otherwise specified
Parameter
Test Conditions
Symbol Min Typ Max Unit
Resistive load (figure 2)
Turn on time
Storage time
I_C = 3 A; I_B1 = 0.7 A;
–I_B2 = 1.5 A; V_S = 125 V
Fall time
Inductive load (figure 3)
t_on
0.85 1.2
ms
t_s
1
1.7
ms
t_f
0.15 0.3
ms
Storage time
I_C = 3 A; I_B1 = 0.7 A; –I_B2 = 1.5 A;
t_s
Fall time
Cross over time
V_S = 125 V; V_clamp = 300 V; –V_BE = 5 V;
L = 200 mH; T_case = 25°C
t_f
t_c
Storage time
I_C = 3 A; I_B1 = 0.7 A; –I_B2 = 1.5 A;
t_s
Fall time
Cross over time
V_S = 125 V; V_clamp = 300 V; –V_BE = 5 V;
L = 200 mH; T_case = 100°C
t_f
t_c
1.5 2.5
ms
0.1 0.2
ms
0.15 0.5
ms
2
ms
0.14
ms
0.25
ms
94 8863
+ V_S2 10 V
3 Pulses
t_p
+_T
0.1
+t_p 10 ms
w I_B
I_C
5
I_C
I_C L_C
+ V_S1
0 to
30
V+
V_CE
V_(BR)CEO
I_(BR)R
100 mW
Figure 1. Test circuit for V_(BR)CE0
I_measure
V_(BR)CEO
Document Number 86512
Rev. 2, 20–Jan–99
www.vishay.de • FaxBack [phone]
3 (9)