 English |
|
|
|
|
|
|
|
| BUF644 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Silicon NPN High Voltage Switching Transistor | |||
| |||
| ◁ |
BUF644
Vishay Telefunken
Electrical Characteristics
Tcase = 25°C, unless otherwise specified
Parameter
Test Conditions
Symbol Min Typ Max Unit
Collector cut-off current
Collector-emitter
breakdown voltage (figure 1)
Emitter-base
breakdown voltage
VCE = 700 V
VCE = 700 V; Tcase = 150°C
IC = 500 mA; L = 125 mH;
Imeasure = 100 mA
IE = 1 mA
ICES
ICES
V(BR)CEO 400
V(BR)EBO 9
50 mA
0.5 mA
V
V
Collector-emitter
IC = 1.3 A; IB = 0.3 A
VCEsat
0.1 0.2 V
saturation voltage
IC = 4 A; IB = 1.3 A
VCEsat
0.2 0.4 V
Base-emitter
saturation voltage
IC = 1.3 A; IB = 0.3 A
IC = 4 A; IB = 1.3 A
VBEsat
VBEsat
0.9 1 V
1 1.2 V
DC forward current
transfer ratio
VCE = 2 V; IC = 10 mA
VCE = 2 V; IC = 1.3 A
hFE
15 18
hFE
12 18
VCE = 2 V; IC = 4 A
hFE
6
VCE = 5 V; IC = 8 A
hFE
4
Collector-emitter
VS = 50 V; L = 1 mH; IC = 8 A;
VCEW 500
V
working voltage
IB1 = 2.7 A; âIB2 = 0.8 A; âVBB = 5 V
Dynamic saturation voltage IC = 4 A; IB = 0.8 A; t = 1 ms
VCEsatdyn
7.5 15 V
IC = 4 A; IB = 0.8 A; t = 3 ms
VCEsatdyn
1.5 4 V
www.vishay.de ⢠FaxBack +1-408-970-5600
2 (9)
Document Number 86512
Rev. 2, 20âJanâ99
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese