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BPW85A Datasheet, PDF (3/6 Pages) Vishay Siliconix – Silicon NPN Phototransistor
BPW85A, BPW85B, BPW85C
Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
104
103
VCE = 20 V
102
101
10
20
40
60
80
100
94 8304
T - Ambient Temperature (°C)
amb
Fig. 2 - Collector Dark Current vs. Ambient Temperature
2.0
1.8
V =5V
CE
1.6
E = 1 mW/cm2
e
λ = 950 nm
1.4
1.2
1.0
0.8
0.6
0
20
40
60
80
100
94 8239
Tamb - Ambient Temperature (°C)
Fig. 3 - Relative Collector Current vs. Ambient Temperature
10
BPW 85 A
λ = 950 nm
1
0.1
Ee = 1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
0.01
0.1
94 8275
1
10
100
VCE - Collector Emitter Voltage (V)
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
10
BPW 85 B
1
0.1
Ee = 1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
λ = 950 nm
0.01
0.1
1
10
100
94 8276
VCE - Collector Emitter Voltage (V)
Fig. 6 - Collector Light Current vs. Collector Emitter Voltage
10
BPW85C
1
BPW85B
BPW85A
0.1
0.01
0.01
94 8271
VCE = 5 V
λ = 950 nm
0.1
1
10
Ee - Irradiance (mW/cm2)
Fig. 4 - Collector Light Current vs. Irradiance
10
E e = 1 mW/cm2
0.5 mW/cm2
1
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
0.1
0.01
0.1
94 8277
BPW 85 C
λ = 950 nm
1
10
100
VCE - Collector Emitter Voltage (V)
Fig. 7 - Collector Light Current vs. Collector Emitter Voltage
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For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81531
Rev. 1.8, 05-Sep-08