BPW85A Datasheet, PDF (1/6 Pages) Vishay Siliconix – Silicon NPN Phototransistor

BPW85A, BPW85B, BPW85C
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
20815
DESCRIPTION
BPW85 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1 plastic package. It is sensitive to
visible and near infrared radiation.
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 25°
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
BPW85A
I_ca (mA)
0.8 to 2.5
BPW85B
1.5 to 4
BPW85C
3 to 8
Note
Test condition see table “Basic Characteristics”
ϕ (deg)
± 25
± 25
± 25
ORDERING INFORMATION
ORDERING CODE
BPW85A
BPW85B
BPW85C
Note
MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
Bulk
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
MOQ: 5000 pcs, 5000 pcs/bulk
MOQ: 5000 pcs, 5000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
t_p/T = 0.5, t_p ≤ 10 ms
T_amb ≤ 55 °C
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t ≤ 3 s, 2 mm from case
Connected with Cu wire Ø 0.14 mm²
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_CEO
V_ECO
I_C
I_CM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
λ_0.1 (nm)
450 to 1080
450 to 1080
450 to 1080
PACKAGE FORM
T-1
T-1
T-1
VALUE
70
5
50
100
100
100
- 40 to + 100
- 40 to + 100
260
450
UNIT
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
www.vishay.com
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For technical questions, contact: [e-mail]
Document Number: 81531
Rev. 1.8, 05-Sep-08