BFR92AF_08 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

Electrical AC Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Transition frequency
V_CE = 10 V, I_C = 14 mA,
f_T
f = 500 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
C_cb
Collector-emitter capacitance V_CE = 10 V, f = 1 MHz
C_ce
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
C_eb
Noise figure
V_CE = 10 V, I_C = 2 mA,
F
Z_S = 50 Ω, f = 800 MHz
Power gain
V_CE = 10 V, Z_S = 50 Ω,
G_pe
Z_L = Z_Lopt, I_C = 14 mA,
f = 800 MHz
Transducer gain
V_CE = 10 V, I_C = 14 mA,
f = 800 MHz, Z_O = 50 Ω
|S_21e|²
Linear output voltage - two tone
intermodulation test
V_CE = 10 V, I_C = 14 mA,
d_IM = 60 dB, f₁ = 806 MHz,
f₂ = 810 MHz, Z_S = Z_L = 50 Ω
V₁ = V₂
Third order intercept point
V_CE = 10 V, I_C = 14 mA,
IP₃
f = 800 MHz
Package Dimensions in mm
BFR92AF
Vishay Semiconductors
Typ.
Max
Unit
6
GHz
0.3
pF
0.15
pF
0.65
pF
1.8
dB
16.5
dB
14
dB
120
mV
24
dBm
1.5 (0.059)
1.7 (0.066)
ISO Method E
3 x 0.20 (0.008)
3 x 0.30 (0.012)
0.1 B
0.1 A
1.5 (0.059)
1.7 (0.066)
0.4 (0.016)
0.65(0.026)
1.15( 0.045)
16866
0.5 (0.016)
1.0 (0.039)
0.5 (0.016)
Document Number 85098
Rev. 1.4, 05-Sep-08
www.vishay.com
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