BFR92AF_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

Not for new design, this product will be obsoleted soon
BFR92AF
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Description
The main purpose of this bipolar transistor is broad-
band amplification up to 1 GHz. In the space-saving
3-pin surface-mount SOT-490 package electrical per-
formance and reliability are taken to a new level cov-
ering a smaller footprint on PC boards than previous
packages. In addition to space savings, the SOT-490
provides a higher level of reliability than other 3-pin
packages, such as more resistance to moisture. Due
to the short length of its leads the SOT-490 is also
reducing package inductances resulting in some bet-
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Electrostatic sensitive device.
Observe precautions for handling.
ter electrical performance. All of these aspects make
this device an ideal choice for demanding RF applica-
tions.
Features
• High power gain
• Low noise figure
e3
• High transition frequency
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Wide band amplifier up to GHz range.
Mechanical Data
Typ: BFR92AF
Case: SOT-490 Plastic case
Weight: approx. 2.5 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Part
BFR92AF
Marking
P2
SOT-490
Package
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
T_amb ≤ 60 °C
Storage temperature range
Symbol
Value
Unit
V_CBO
20
V
V_CEO
15
V
V_EBO
2
V
I_C
30
mA
P_tot
200
mW
T_j
150
°C
T_stg
-65 to +150
°C
Document Number 85098
Rev. 1.4, 05-Sep-08
www.vishay.com
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