BFR193T_05 Datasheet, PDF (3/6 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFR193T / BFR193TW
Vishay Semiconductors
Electrical AC Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Transition frequency
V_CE = 8 V, I_C = 50 mA,
f = 1 GHz
f_T
6
8
GHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
C_cb
0.6
1.0
pF
Collector-emitter capacitance V_CE = 10 V, f = 1 MHz
C_ce
0.25
pF
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
C_eb
1.6
pF
Noise figure
Z_S = Z_Sopt,Z_L=50Ω, f = 900
F
MHz, V_CE = 8 V, I_C = 10 mA
1.2
dB
Z_S = Z_Sopt,Z_L=50Ω, f = 2 GHz,
F
V_CE = 8 V, I_C = 10 mA
2.1
dB
Power gain
Z_S = Z_Sopt,Z_L=50Ω, f = 900
G_pe
15
dB
MHz, V_CE = 8 V, I_C = 30 mA
Z_S = Z_Sopt,Z_L=50Ω, f = 2 GHz,
G_pe
9
dB
V_CE = 8 V,
I_C = 30 mA
Transducer gain
Z_O=50Ω, f = 900 MHz,
|S_21e|²
13
dB
V_CE = 8 V, I_C = 30 mA
Z_O=50Ω, f = 2 GHz, V_CE = 8 V,
|S_21e|²
7
dB
I_C = 30 mA
Third order intercept point at V_CE = 8 V, I_C = 50 mA,
IP₃
output
f = 900 MHz
34
dBm
Package Dimensions in mm (Inches)
0.4 (.016) 0.4 (.016)
3.1 (.122)
2.8 (.110)
0.4 (.016)
3
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
2.6 (.102)
2.35 (.092)
Mounting Pad Layout
0.52 (0.020)
ISO Method E
0.9 (0.035)
2.0 (0.079)
1
0.95 (.037)
2
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
Document Number 85073
Rev. 1.3, 28-Apr-05
www.vishay.com
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