BFR193T_05 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

Silicon NPN Planar RF Transistor
BFR193T / BFR193TW
Vishay Semiconductors
Features
• Low noise figure
• High transition frequency f_T = 8 GHz
e3
• Excellent large-signal behaviour
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
For low-noise, high-gain applications such as power
amplifiers up to 2GHz and for linear broadband ampli-
fiers.
Mechanical Data
Typ: BFR193T
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Marking: RC
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Typ: BFR193TW
Case: SOT-323 Plastic case
Weight: approx. 6.0 mg
Marking: WRC
1
2
3
1
2
3
Electrostatic sensitive device.
Observe precautions for handling.
13581
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
T_amb ≤ 45 °C
Storage temperature range
Symbol
Value
Unit
V_CBO
20
V
V_CEO
12
V
V_EBO
2
V
I_C
80
mA
P_tot
420
mW
T_j
150
°C
T_stg
- 65 to + 150
°C
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
Unit
Junction ambient
1)
R_thJA
250
K/W
1) _{on glass fibre printed board (25 x 20 x 1.5) mm}3 _{plated with 35 μm Cu}
Document Number 85073
Rev. 1.3, 28-Apr-05
www.vishay.com
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