BFP181T Datasheet, PDF (3/5 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFP181T / BFP181TW / BFP181TRW
Vishay Semiconductors
Electrical AC Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Transition frequency
V_CE = 3 V, I_C = 6 mA,
f_T
f = 500 MHz
6.8
GHz
V_CE = 8 V, I_C = 10 mA,
f_T
f = 500 MHz
8.0
GHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
C_cb
0.3
pF
Collector-emitter capacitance V_CE = 10 V, f = 1 MHz
C_ce
0.2
pF
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
C_eb
0.45
pF
Noise figure
V_CE = 5 V, I_C = 3 mA, Z_S = Z_Sopt,
F
f = 900 MHz
1.5
dB
V_CE = 5 V, I_C = 3 mA, Z_S = Z_Sopt,
F
f = 1.75 GHz
2.2
dB
Power gain
V_CE = 8 V, I_C = 8 mA, Z_S = 50 Ω,
G_pe
16.5
dB
Z_L = Z_Lopt, f = 900 MHz
V_CE = 8 V, I_C = 8 mA, Z_S = 50 Ω,
G_pe
13.5
dB
Z_L = Z_Lopt, f = 1.75 GHz
Transducer gain
V_CE = 8 V, I_C = 8 mA, Z₀ = 50 Ω,
|S_21e|²
16
dB
f = 900 MHz
Package Dimensions in mm
0.50(0.020)
0.35 (0.014)
0.9 (0.035)
0.75 (0.029)
0.15 (0.006)
0.08 (0.003)
1.1 (0.043)
0.9 (0.035)
3.0 (0.117)
2.8 (0.109)
Mounting Pad Layout
1.8 (0.070)
1.6 (0.062)
0.65 (0.025)
1.17 (0.046)
2.0 (0.078)
1.8 (0.070)
0...0.1 (0...0.004)
ISO Method E
96 12240
Document Number 85012
Rev. 1.4, 02-Mar-05
www.vishay.com
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