BFP181T Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFP181T / BFP181TW / BFP181TRW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Features
• Low noise figure
• High power gain
e3
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA.
2
1
SOT-143
3
4
21
SOT-343
34
12
Mechanical Data
Typ:BFP181T
Case: SOT-143 Plastic case
Weight: approx. 8.0 mg
Marking: 18
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Typ: BFP181TW
Case: SOT-343 Plastic case
Weight: approx. 6.0 mg
Marking: W18
Pinning:
1 = Collector, 2 = Emitter,
SOT-343R
43
18383
Electrostatic sensitive device.
Observe precautions for handling.
3 = Base, 4 = Emitter
Typ: BFP181TRW
Case: SOT-343R Plastic case
Weight: approx. 6.0 mg
Marking: WSF
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
T_amb ≤ 78 °C
Storage temperature range
Symbol
Value
Unit
V_CBO
15
V
V_CEO
10
V
V_EBO
2
V
I_C
20
mA
P_tot
160
mW
T_j
150
°C
T_stg
- 65 to + 150
°C
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
Unit
Junction ambient
1)
R_thJA
450
K/W
1) _{on glass fibre printed board (25 x 20 x 1.5) mm}3 _{plated with 35 µm Cu}
Document Number 85012
Rev. 1.4, 02-Mar-05
www.vishay.com
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