B120-E3 Datasheet, PDF (3/4 Pages) Vishay Siliconix – Surface Mount Schottky Barrier Rectifier

B120-E3, B130-E3, B140-E3, B150-E3, B160-E3
www.vishay.com
Vishay General Semiconductor
10
T_J = 150 °C
T_J = 125 °C
1
T_J = 25 °C
0.1
0.01
0
B120, B130, B140
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
Fig. 5 - Typical Instantaneous Forward Characteristics
100 000
10 000
B120, B130, B140
B150, B160
T_J = 150 °C
1000
100
T_J = 125 °C _{TJ = 25 °C}
10
1
0.1
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 7 - Typical Reverse Leakage Characteristics
10
T_J = 150 °C
T_J = 125 °C
1
T_J = 25 °C
0.1
1000
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
0.01
0
B150, B160
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
Fig. 6 - Typical Instantaneous Forward Characteristics
B120, B130, B140
B150, B160
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 8 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.090 (2.29)
0.078 (1.98)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 13-Aug-13
3
Document Number: 88946
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000