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B120-E3 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Surface Mount Schottky Barrier Rectifier
B120-E3, B130-E3, B140-E3, B150-E3, B160-E3
www.vishay.com
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
20 V, 30 V, 40 V, 50 V, 60 V
IFSM
30 A
VF
0.52 V, 0.75 V
TJ max.
Package
125 °C, 150 °C
DO-214AC
Diode variations
Single
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
Note
• These devices are not AEC-Q101 qualified
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
VRRM
IF(AV)
IFSM
dV/dt
TJ
TSTG
B120
B12
20
B130
B13
30
B140
B14
40
1.0
B150
B15
50
B160
B16
60
30
10 000
- 65 to + 125
- 65 to + 150
- 65 to + 150
UNIT
V
A
A
V/μs
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL B120 B130
Maximum instantaneous forward voltage 1.0 A
Maximum reverse current at rated VR
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
TA = 25 °C
TA = 100 °C
VF (1)
IR (2)
0.52
6.0
B140
0.2
B150 B160
0.75
UNIT
V
mA
5.0
Revision: 13-Aug-13
1
Document Number: 88946
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000