80EPS16PBF Datasheet, PDF (3/6 Pages) International Rectifier – INPUT RECTIFIER DIODE Lead-Free ("PbF" suffix)

VS-80EPS16PbF High Voltage Series
Input Rectifier Diode, 80 A
Vishay Semiconductors
120
180°
120°
100
90°
60°
30°
80
RMS limit
60
Ø
40
Conduction angle
80EPS.. Series
20
T_J = 150 °C
0
0 10 20 30 40 50 60 70 80 90
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
1600
1400
1200
At any rated load condition and with
rated V_RRM applied following surge.
Initial T_J = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
1000
800
600 _{80EPS.. Series}
400
1
10
100
Number of Equal Amplitude Half
Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
160
DC
140
180°
120°
120
90°
60°
100
30°
RMS limit
80
60
Ø
Conduction period
40
80EPS.. Series
20
T_J = 150 °C
0
0 20 40 60 80 100 120 140
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
1000
1800
1600
1400
1200
Maximum non-repetitive surge current
versus pulse train duration.
Initial T_J = 150 °C
No voltage reapplied
Rated V_RRM reapplied
1000
800
600
80EPS.. Series
400
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
100
T_J = 25 °C
10
T_J = 150 °C
80EPS.. Series
1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous Forward Characteristics
Fig. 7 - Forward Voltage Drop Characteristics
Document Number: 94348 For technical questions within your region, please contact one of the following:
Revision: 20-Apr-11
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3
This document is subject to change without notice.
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