80EPS16PBF Datasheet, PDF (2/6 Pages) International Rectifier – INPUT RECTIFIER DIODE Lead-Free ("PbF" suffix)

VS-80EPS16PbF High Voltage Series
Vishay Semiconductors
Input Rectifier Diode, 80 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
V_FM
r_t
V_F(TO)
Maximum reverse leakage current
I_RM
TEST CONDITIONS
80 A, T_J = 25 °C
T_J = 150 °C
T_J = 25 °C
T_J = 150 °C
V_R = Rated V_RRM
VALUES
1.17
3.17
0.73
0.1
1.0
UNITS
V
m
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
T_J, T_Stg
R_thJC
DC operation
Maximum thermal resistance,
junction to ambient
R_thJA
Typical thermal resistance,
case to heatsink
R_thCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-247AC (JEDEC)
VALUES
- 40 to 150
UNITS
°C
0.35
40
°C/W
0.2
6
g
0.21
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
80EPS16
150
80EPS.. Series
140
R_thJC (DC) = 0.35 K/W
130
Ø
Conduction angle
120
110
100
90
80
0
30°
60°
90°
120°
180°
10 20 30 40 50 60 70 80 90
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
150
80EPS.. Series
R_thJC (DC) = 0.35 K/W
140
130
120
110
100
90
0
Ø
Conduction period
30°
60°
90°
120°
180°
DC
20 40 60 80 100 120 140
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
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Revision: 20-Apr-11
This document is subject to change without notice.
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