70267 Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S), 150C MOSFET

SUD45P03-15
Siliconix
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
100
V_GS = 10, 9, 8 V
7V
6V
80
5V
60
40
4V
Transfer Characteristics
80
T_C = –55_C
60
25_C
125_C
40
20
3V
2V
0
0
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
20
0
0
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
Transconductance
50
T_C = –55_C
25_C
40
30
125_C
On-Resistance vs. Drain Current
0.05
0.04
V_GS = 4.5 V
0.03
20
0.02
V_GS = 10 V
10
0.01
0
0
4500
10
20
30
40
50
60
I_D – Drain Current (A)
Capacitance
3600
C_iss
2700
0
0
20
40
60
80
100
I_D – Drain Current (A)
Gate Charge
10
8
V_DS = 15 V
I_D = 45 A
6
1800
4
C_oss
900
C_rss
2
0
0
5
10
15
20
25
30
V_DS – Drain-to-Source Voltage (V)
0
0
10
20
30
40
50
Q_g – Total Gate Charge (nC)
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone [phone] S FaxBack [phone] S www.siliconix.com
S-57253—Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
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