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70267 Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S), 150C MOSFET
SUD45P03-15
Siliconix
P-Channel 30-V (D-S), 150_C MOSFET
Product Summary
VDS (V)
–30
rDS(on) (W)
0.015 @ VGS = –10 V
0.024 @ VGS = –4.5 V
ID (A)a
"13
"8
S
TO-252
GD S
Top View
Order Number:
SUD45P03-15
Drain Connected to Tab
G
D
P-Channel MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currentb
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipationb
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 100_C
TC = 25_C
TA = 25_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
–30
V
"20
"13
"8
A
"100
–13
70
W
4a
–55 to 150
_C
Thermal Resistance Ratings
Parameter
Symbol
Typical
Maximum Unit
Maximum Junction-to-Ambientb
Maximum Junction-to-Case
RthJA
RthJC
30
_C/W
1.8
Notes
a. Calculated Rating for TA = 25_C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings
and Typical Characteristics).
b. Surface Mounted on FR4 Board, t v 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70267.
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com
S-57253—Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
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