2N5564 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Matched N-Channel JFET Pairs

2N5564/5565/5566
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
100
200
r_DS @ ID = 1 mA, V_GS = 0
I_DSS @ V_DS = 15 V, V_GS = 0
80
160
On-Resistance vs. Drain Current
100
T_A = 25_C
80
60
r_DS
I_DSS
120
V_GS(off) = –2 V
60
40
80
40
20
40
0
0
–2
–4
–6
–8
V_GS(off) – Gate-Source Cutoff Voltage (V)
On-Resistance vs. Temperature
200
I_D = 1 mA
r_DS changes 0.7%/_C
160
0
–10
120
V_GS(off) = –2 V
80
40
0
–55 –35 –15 5
25 45 65 85 105 125
T_A – Temperature (_C)
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
50
500
g_fs and g_os @ V_DS = 15 V
V_GS = 0 V, f = 1 kHz
40
400
30
g_fs
g_os
200
20
200
10
100
0
0
0
–2
–4
–6
–8
–10
V_GS(off) – Gate-Source Cutoff Voltage (V)
Document Number: 70254
S-04031—Rev. D, 04-Jun-01
20
0
1
5
4
3
2
10
100
I_D – Drain Current (mA)
Turn-On Switching
t_r approximately independent of I_D
V_DG = 5 V, R_G = 50 W
V_GS(L) = –10 V
t_r
t_d(on) @
I_D = 12 mA
1
t_d(on) @
I_D = 3 mA
0
0
–2
–4
–6
–8
–10
V_GS(off) – Gate-Source Cutoff Voltage (V)
Turn-Off Switching
30
t_d(off) independent of device V_GS(off)
V_DG = 5 V, V_GS(L) = –10 V
24
t_f
18
V_GS(off) = –2 V
12
t_d(off)
6
0
0
2
4
6
8
10
I_D – Drain Current (mA)
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