20MQ040-M3 Datasheet, PDF (3/6 Pages) Vishay Siliconix – Schottky Rectifier, 2 A

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10
VS-20MQ040-M3
Vishay Semiconductors
100
T_J= 25°C
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
1
10
0 5 10 15 20 25 30 35 40
Reverse Voltage - V_R(V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
0.1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Forward Voltage Drop - V_FM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
160
150
140
130
DC
120
110
D = 0.20
100
D = 0.25
90
D = 0.33
80
D = 0.50
D = 0.75
70 _{Square wave (D=0.50)}
60 _{rated Vr applied}
50 _{see note (1)}
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Average forward current-I (A)
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
100
10
1
0.1
0.01
0.001
T_J= 150°C
125°C
100°C
75°C
50°C
25°C
1.4
D = 0.20
1.2 ^{D = 0.25}
D = 0.33
1
D = 0.50
D = 0.75
0.8
RMSLimit
DC
0.6
0.4
0.2
0.0001
0 5 10 15 20 25 30 35 40
0
0 0.4 0.8 1.2 1.6 2 2.4
Reverse Voltage - V_R (V)
Average Forward Current - I _F(AV) (A)
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;}
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6); Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = 80 % rated V_R
Revision: 22-Aug-11
3
Document Number: 93370
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