20MQ040-M3 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Schottky Rectifier, 2 A

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VS-20MQ040-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
V_FM ⁽¹⁾
Maximum reverse leakage current
See fig. 2
I_RM
Threshold voltage
Forward slope resistance
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
V_F(TO)
r_t
C_T
L_S
dV/dt
Note
(1) _{Pulse width = 300 μs, duty cycle = 2 %}
2A
1.5 A
1A
2A
1.5 A
1A
T_J = 25 °C
T_J = 125 °C
TEST CONDITIONS
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
T_J = T_J maximum
V_R = 10 V_DC, T_J = 25 °C, test signal = 1 MHz
Measured lead to lead 5 mm from package body
Rated V_R
VALUES
0.69
0.62
0.54
0.63
0.56
0.49
0.5
26
0.36
104
38
2.0
10 000
UNITS
V
mA
V
m
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
T_J ⁽¹⁾, T_Stg
Maximum thermal resistance,
junction to ambient
R_thJA
DC operation
Approximate weight
Marking device
Case style SMA (similar D-64)
Note
(1) ^d----P-----t_-^o_---^t _{< ------1-------- thermal runaway condition for a diode on its own heatsink}
dT_J R_thJA
VALUES
- 55 to 150
UNITS
°C
80
°C/W
0.07
g
0.002
oz.
2F
Revision: 22-Aug-11
2
Document Number: 93370
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