1N3879_12 Datasheet, PDF (3/13 Pages) Vishay Siliconix – Fast Recovery Diodes (Stud Version), 6/12/16 A

1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Fast Recovery Diodes _{Vishay High Power Products}
(Stud Version), 6/12/16 A
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum reverse
recovery time
t_rr
Maximum peak
recovery current
I_RM(REC)
Maximum reverse
recovery charge
Q_rr
Note
(1) _{JEDEC registered values}
T_J = 25 °C, I_F = 1 A to V_R = 30 V,
dI_F/dt = 100 A/µs
T_J = 25 °C, dI_F/dt = 25 A/µs,
I_FM = π x rated I_F(AV)
I_FM = π x rated I_F(AV)
T_J = 25 °C, I_F = 1 A to V_R = 30 V,
dI_F/dt = 100 A/µs
T_J = 25 °C, dI_F/dt = 25 A/µs,
I_FM = π x rated I_F(AV)
1N3879. 1N3889.
1N3883. 1N3893.
150
150
300 ⁽¹⁾ 300 ⁽¹⁾
4 ⁽¹⁾
5 ⁽¹⁾
400
350
400
400
6FL..
12FL..
16FL..
S02 S05
-
-
200 500
-
-
-
-
-
UNITS
ns
-
nC
I_FM
t_rr
dir
t
dt
Q_rr
I_RM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Allowable mounting torque
T_J
T_Stg
R_thJC
R_thCS
DC operation
Mounting surface, smooth,
flat and greased
Not lubricated threads
Lubricated threads
Approximate weight
Case style
JEDEC
1N3879.
1N3883.
6FL..
1N3889.
1N3893.
12FL..
16FL..
- 65 to 150
- 65 to 175
2.5
2.0
1.6
0.5
1.5 ^{+ 0 - 10 %}
(13)
1.2 ^{+ 0 - 10 %}
(10)
7
0.25
DO-203AA (DO-4)
UNITS
°C
°C/W
N·m
(lbf · in)
g
oz.
Document Number: 93138
Revision: 26-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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