1N3879_12 Datasheet, PDF (2/13 Pages) Vishay Siliconix – Fast Recovery Diodes (Stud Version), 6/12/16 A

1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Vishay High Power Products ^{Fast Recovery Diodes}
(Stud Version), 6/12/16 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
V_RRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
1N3879.
50
1N3880.
100
1N3881.
-
200
1N3882.
300
1N3883.
400
1N3889.
50
1N3890.
100
1N3891.
-
200
1N3892.
300
1N3893.
400
5
50
10
100
6FL..
20
200
12FL..
40
400
16FL..
60
600
80
800
100
1000
Note
(1) _{JEDEC registered values}
V_RSM, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
75
150
250
350
450
75
150
250
350
450
75
150
275
500
725
950
1250
I_RRM MAXIMUM
AT T_J = 25 °C
µA
I_RRM MAXIMUM
AT T_J = 100 °C
mA
I_RRM MAXIMUM
AT T_J = 150 °C
mA
15 ⁽¹⁾
1.0 ⁽¹⁾
3.0 ⁽¹⁾
25 ⁽¹⁾
3.0 ⁽¹⁾
5.0 ⁽¹⁾
50
-
6.0
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
Maximum RMS current
I_F(AV)
I_F(RMS)
Maximum peak, one-cycle
non-repetitive forward current
I_FSM
Maximum I²t for fusing
I²t
Maximum I²âˆšt for fusing
I²âˆšt
Maximum forward voltage drop
V_FM
Note
(1) _{JEDEC registered values}
TEST CONDITIONS
180° conduction, half sine wave
DC
t = 10 ms _{No voltage}
t = 8.3 ms ^reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal
half wave,
initial
T_J = 150 °C
t = 10 ms _{100 % VRRM}
t = 8.3 ms ^reapplied
t = 0.1 to 10 ms, no voltage reapplied
T_J = 25 °C; I_F = Rated I_F(AV) (DC)
T_C = 100 °C; I_FM = π x rated I_F(AV)
1N3879.
1N3883.
6 ⁽¹⁾
100
9.5
85
90
72
75 ⁽¹⁾
36
33
26
23
363
1.4 ⁽¹⁾
1.5 ⁽¹⁾
6FL..
6
100
9.5
130
135
110
115
86
78
60
55
856
1.4
1.5
1N3889.
1N3893. 16FL.. UNITS
12FL..
12 ⁽¹⁾
16
A
100
100
°C
19
25
170
215
180
225
A
145
180
150 ^{(1) 190}
145
230
130
210
A²s
103
160
94
150
1452 2290 A²âˆšs
1.4 ⁽¹⁾
1.4
V
1.5 ⁽¹⁾
1.5
V
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Document Number: 93138
Revision: 26-Sep-08