1N1190RA Datasheet, PDF (3/8 Pages) Vishay Siliconix – Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A

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1N1183, 1N3765, 1N1183A, 1N2128A Series
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating
case temperature range
Maximum storage
temperature range
Maximum internal thermal
resistance, junction to case
Thermal resistance,
case to sink
SYMBOL
T_C
T_Stg
R_thJC
R_thCS
Maximum allowable
mounting torque
(+ 0 %, - 10 %)
TEST CONDITIONS
1N1183 1N3765 1N1183A 1N2128A UNITS
- 65 to 190 ⁽¹⁾
- 65 to 200
°C
- 65 to 175 ⁽¹⁾
- 65 to 200
DC operation
Mounting surface, smooth, flat and greased
Not lubricated thread, tighting on nut ⁽²⁾
Lubricated thread, tighting on nut ⁽²⁾
Not lubricated thread, tighting on hexagon ⁽³⁾
Lubricated thread, tighting on hexagon ⁽³⁾
1.00 ⁽¹⁾
1.1 ⁽¹⁾
0.25
3.4 (30)
2.3 (20)
4.2 (37)
3.2 (28)
0.65 ⁽¹⁾
°C/W
N·m
(lbf · in)
Approximate weight
17
g
0.6
oz.
Case style
JEDEC
DO-203AB (DO-5)
Notes
(1) _{JEDEC registered values}
(2) _{Recommended for pass-through holes}
(3) _{Recommended for holed threaded heatsinks}
Fig. 1 - Maximum Allowable Case Temperature vs.
Average Forward Current, 1N1183 and 1N3765 Series
Fig. 2 - Typical Low Level Forward Power Loss vs.
Average Forward Current (Sinusoidal Current Waveform),
1N1183 and 1N3765 Series
Revision: 04-Dec-12
3
Document Number: 93492
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