1N1190RA Datasheet, PDF (2/8 Pages) Vishay Siliconix – Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A

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1N1183, 1N3765, 1N1183A, 1N2128A Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
1N1183 1N3765 1N1183A 1N2128A UNITS
Maximum average forward current 
at case temperature
I_F(AV)
1-phase operation, 
180° sinusoidal conduction
35 ⁽¹⁾
35 ⁽¹⁾
40 ⁽¹⁾
60 ⁽¹⁾
A
140 ⁽¹⁾ 140 ⁽¹⁾ 150 ⁽¹⁾
140 ⁽¹⁾
°C
Maximum peak one cycle
non-repetitive surge current
Half cycle 50 Hz
sine wave or 6 ms ^{Following any}
480
380
765
860
rectangular pulse ^{rated load}
condition and
Half cycle 60 Hz
sine wave or 5 ms
rectangular pulse
with rated
V_RRM applied
500 ⁽¹⁾ 400 ⁽¹⁾ 800 ⁽¹⁾
900 ⁽¹⁾
I_FSM
Half cycle 50 Hz _{Following any}
A
sine wave or 6 ms _{rated load}
570
455
910
1000
rectangular pulse _{condition and}
Half cycle 60 Hz ^{with ½ V}RRM
sine wave or 5 ms ^{applied following} 595
475
950
1050
rectangular pulse ^{surge = 0}
Maximum I²t for fusing
Maximum I²t for individual
device fusing
Maximum I²ïƒ–t for individual
device fusing
Maximum peak forward voltage
at maximum forward current (I_FM)
I²t
I²ïƒ–t ⁽²⁾
V_FM
t = 10 ms
t = 8.3 ms
With rated V_RRM
applied following
surge, initial
T_J = T_J maximum
1140
1040
t = 10 ms
t = 8.3 ms
With V_RRM = 0
following surge,
initial 
T_J = T_J maximum
t = 0.1 to 10 ms, 
V_RRM = 0 following surge
T_J = 25 °C
1610
1470
16 100
1.7 ⁽¹⁾
110
730
670
1030
940
10 300
1.8 ⁽¹⁾
110
2900
2650
4150
3750
41 500
1.3 ⁽¹⁾
126
3700
3400
A²s
5250
4750
52 500
1.3 ⁽¹⁾
188
A²ïƒ–s
V
A
V_RRM = 700
-
5.0 ⁽¹⁾
-
-
Maximum average
reverse current
V_RRM = 800
V_RRM = 900
V_RRM = 1000
I_R(AV)
Maximum rated I_F(AV) and T_C
-
4.0 ⁽¹⁾
-
-
3.0 ⁽¹⁾
-
-
2.0 ⁽¹⁾
-
-
-
mA
-
Maximum rated I_F(AV), V_RRM and T_C
10 ⁽¹⁾
-
2.5 ⁽¹⁾
10 ⁽¹⁾
Notes
(1) _{JEDEC registered values}
(2) _I2_{t for time tx = I}2_{t x tx}
Revision: 04-Dec-12
2
Document Number: 93492
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