VT1080C-E3 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Dual Trench MOS Barrier Schottky Rectifier

VT1080C-E3, VFT1080C-E3, VBT1080C-E3, VIT1080C-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage
per diode
Reverse current per diode
I_R = 10 mA
I_F = 3 A
I_F = 5 A
I_F = 3 A
I_F = 5 A
V_R = 80 V
T_A = 25 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_BR
V_F ⁽¹⁾
I_R ⁽²⁾
80 (minimum)
0.54
0.63
0.49
0.57
12
6
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
MAX.
-
-
0.72
-
0.66
400
15
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL VT1080C VFT1080C
per diode
3.5
6.5
Typical thermal resistance
per device
R_JC
2.5
5.5
VBT1080C
3.5
2.5
VIT1080C
3.5
2.5
UNIT
V
V
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
VT1080C-E3/4W
1.88
ITO-220AB
VFT1080C-E3/4W
1.70
TO-263AB
VBT1080C-E3/4W
1.35
TO-263AB
VBT1080C-E3/8W
1.35
TO-262AA
VIT1080C-E3/4W
1.43
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
V(B,I)T1080C
8
VFT1080C
6
4
2
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
4.0
D = 0.8
3.5
D = 0.5
3.0
D = 0.3
D = 0.2
2.5
D = 0.1
D = 1.0
2.0
1.5
T
1.0
0.5
0
0
D = t_p/T
t_p
1
2
3
4
5
6
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 11-Sep-13
2
Document Number: 89164
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