VT1080C-E3 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual Trench MOS Barrier Schottky Rectifier

VT1080C-E3, VFT1080C-E3, VBT1080C-E3, VIT1080C-E3
www.vishay.com
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.49 V at I_F = 3 A
TO-220AB
TMBS ^®
ITO-220AB
VT1080C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
123
VFT1080C
PIN 1
PIN 2
PIN 3
TO-262AA
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB,
and TO-262AA package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
2
1
VBT1080C
PIN 1
K
PIN 2
HEATSINK
VIT1080C
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 5 A
T_J max.
Package
2x5A
80 V
80 A
0.57 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations
Common cathode
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
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MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
V_RRM
I_F(AV)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
I_FSM
Non-repetitive avalanche energy at T_J = 25 °C, L = 60 mH 
per diode
E_AS
Peak repetitive reverse current at t_p = 2 μs, 1 kHz,
T_J = 38 °C ± 2 °C per diode
Voltage rate of change (rated V_R)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
I_RRM
dV/dt
V_AC
Operating junction and storage temperature range
T_J, T_STG
VT1080C
VFT1080C VBT1080C
80
10
5
VIT1080C
80
30
1.0
10 000
1500
-55 to +150
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 11-Sep-13
1
Document Number: 89164
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000