VSSB410S_15 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Surface Mount Trench MOS Barrier Schottky Rectifier

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VSSB410S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage
I_R = 1.0 mA
I_F = 4.0 A
Reverse current
V_R = 70 V
V_R = 100 V
Typical junction capacitance
4.0 V, 1 MHz
Notes
(1) _{Pulse test: 300 µs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
T_A = 25 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_BR
V_F ⁽¹⁾
I_R ⁽²⁾
C_J
100 (minimum)
0.68
0.61
1.5
1.2
7.0
3.6
230
MAX.
-
0.77
0.69
-
-
250
20
-
UNIT
V
V
μA
mA
μA
mA
pF
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSSB410S
Typical thermal resistance
R_JA ⁽¹⁾
120
R_JM ⁽²⁾
15
Notes
(1) _{Free air, mounted on recommended PCB 1 oz. pad area. Thermal resistance RJA - junction to ambient}
(2) _{Units mounted on PCB with 14 mm x 14 mm copper pad areas. RJM - junction to mount}
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
VSSB410S-E3/52T
0.096
52T
VSSB410S-E3/5BT
0.096
5BT
BASE QUANTITY
DELIVERY MODE
750
7" diameter plastic tape and reel
3200
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5 TM Measured at Terminal
0
0
25
50
75
100
125
150
T_M - Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
3.2
D = 0.5 _{D = 0.8}
2.8
D = 0.3
D = 0.2
2.4
2.0
D = 0.1
1.6
D = 1.0
1.2
T
0.8
0.4
D = t_p/T
t_p
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 05-Nov-13
2
Document Number: 89140
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