VSSB410S_15 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Surface Mount Trench MOS Barrier Schottky Rectifier

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VSSB410S
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS^®
DO-214AA (SMB)
PRIMARY CHARACTERISTICS
Package
DO-214AA (SMB)
I_F(AV)
V_RRM
I_FSM
E_AS
V_F at I_F = 4.0 A
T_J max.
Diode variations
4.0 A
100 V
80 A
50 mJ
0.61 V
150 °C
Single die
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy
at T_J = 25 °C, L = 60 mH
Peak repetitive reverse current at t_p = 2 μs, 1 kHz,
T_J = 38 °C ± 2 °C
Operating junction and storage temperature range
V_RRM
I_F ⁽¹⁾
I_F ⁽²⁾
I_FSM
E_AS
I_RRM
T_J, T_STG
Notes
(1) _{Mounted on 14 mm x 14 mm pad areas, 1 oz. FR4 PCB}
(2) _{Free air, mounted on recommended copper pad area}
VSSB410S
V4B
100
4.0
1.9
80
50
1.0
-40 to +150
UNIT
V
A
A
mJ
A
°C
Revision: 05-Nov-13
1
Document Number: 89140
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000