VSB3200 Datasheet, PDF (2/4 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier

VSB3200
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage ⁽¹⁾
Reverse current per diode ⁽²⁾
Typical juntion capacitance
I_R = 1.0 mA
I_F = 3.0 A
V_R = 200 V
4.0 V, 1 MHz
T_A = 25 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width ≤ 40 ms}
V_BR
200 (minimum)
0.86
V_F
0.63
1.6
I_R
1.2
C_J
175
MAX.
-
1.20
0.71
60
9
-
UNIT
V
μA
mA
pF
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSB3200
Typical thermal resistance ⁽¹⁾
R_θJA
62
R_θJL
9
Note
(1) _{Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air}
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
VSB3200-M3/54
1.08
54
VSB3200-M3/73
1.08
73
BASE QUANTITY
1400
1000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
3.5
Resistive or Inductive Load
3.0
2.5
2.0
1.5
1.0
0.5
0.375" (9.5 mm) Lead Length
0
0
25 50 75 100 125 150 175
Lead Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
2.4
D = 0.8
D = 0.3 ^{D = 0.5}
2.0
D = 0.2
1.6
D = 0.1
D = 1.0
1.2
T
0.8
0.4
0
0
D = t_p/T
t_p
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
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2
For technical questions within your region, please contact one of the following: Document Number: 89144
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Revision: 27-Sep-10