VSB3200 Datasheet, PDF (1/4 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier

New Product
VSB3200
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS^®
DO-201AD
PRIMARY CHARACTERISTICS
I_F(AV)
3.0 A
V_RRM
200 V
I_FSM
90 A
V_F at I_F = 3.0 A
0.63 V
T_J max.
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, dc-to-dc converters or
polarity protection application.
MECHANICAL DATA
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSB3200
Maximum repetitive peak reverse voltage
V_RRM
200
Maximum average forward rectified current (fig. 1) ⁽¹⁾
I_F(AV)
3.0
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I_FSM
90
Voltage rate of change (rated V_R)
dV/dt
10 000
Operating junction and storage temperature range
T_J, T_STG
- 40 to + 150
Note
(1) _{Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air}
UNIT
V
A
A
V/μs
°C
Document Number: 89144 For technical questions within your region, please contact one of the following:
Revision: 27-Sep-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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