VS-VSUD360CW40 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Designed and qualified for industrial level

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VS-VSUD360CW40
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
t_rr
T_J = 25 °C
T_J = 150 °C
I_F = 180 A,
dI_F/dt = 200 A/μs,
V_R = 200 V
-
40
-
74
-
171
Peak recovery current
Reverse recovery charge
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
-
I_RRM
I_F = 180 A, dI_F/dt = 200 A/μs, V_R = 200 V
-
I_F = 180 A, dI_F/dt = 200 A/μs, V_R = 200 V, T_J = 150 °C
-
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
-
Q_rr
I_F = 180 A, dI_F/dt = 200 A/μs, V_R = 200 V
-
I_F = 180 A, dI_F/dt = 200 A/μs, V_R = 200 V, T_J = 150 °C
-
5.1
6.6
15.2
125
243
1295
MAX.
69
-
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Thermal resistance,
junction to case
per leg
per
module
Thermal resistance,
case to heatsink (flag greased surface)
R_thJC
R_thCS
Weight
Mounting torque
Mounting torque center hole
Terminal torque
Vertical pull
2" lever pull
Case style
MIN.
-
-
-
-
-
30 (3.4)
12 (1.4)
30 (3.4)
-
-
TYP.
-
-
MAX.
0.19
0.095
0.10
-
68
-
2.4
-
-
40 (4.6)
-
18 (2.1)
-
40 (4.6)
-
80
-
35
TO-244 (TO-244AB)
UNITS
°C/W
g
oz.
lbf · in
(N · m)
lbf · in
1000
100
10
T_J = 25 °C
T_J = 125 °C
1
0
0.5
1.0
1.5
2.0
93116_01
V_FM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
1000
100
T_J = 150 °C
10
1
T_J = 25 °C
0.1
0
93116_02
100
200
300
400
V_R - Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage (Per Leg)
Revision: 03-Nov-16
2
Document Number: 93116
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