VS-VSKEU300 Datasheet, PDF (2/6 Pages) Vishay Siliconix – High surge capability

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VS-VSKEU300/12PbF
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Diode reverse recovery charge
Reverse recovery time
Reverse recovery current
T_J = 25 °C
-
Q_rr
T_J = 125 °C
-
t_rr
T_J = 25 °C
I_F = 45 A
V_R = 400 V
-
T_J = 125 °C _{dIF/dt = 500 A/μs}
-
T_J = 25 °C
-
I_rr
T_J = 125 °C
-
TYP.
3.5
10.4
233
396
30
53
MAX.
-
-
-
-
-
-
UNITS
μC
ns
A
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum internal thermal resistance, 
junction to case per leg
Typical thermal resistance,
case to heatsink per module
R_thJC
R_thCS
DC operation
Mounting surface flat, smooth and greased
Mounting torque ± 10 %
to heatsink
busbar
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound.
Approximate weight
Case style
VALUES
0.12
0.05
UNITS
°C/W
4
Nm
6
200
g
7.1
oz.
New INT-A-PAK
1000
T_J = 150 °C
100
T_J = 125 °C
10
0
T_J = 25 °C
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_FM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
10
175 °C
150 °C
1
125 °C
0.1
0.01
200
25 °C
400
600
800 1000
V_R - Reverse Voltage (V)
1200
Fig. 2 - Typical Value of Reverse Current vs. Reverse Voltage
Revision: 02-Dec-15
2
Document Number: 94670
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