VS-VSKEU300 Datasheet, PDF (1/6 Pages) Vishay Siliconix – High surge capability

www.vishay.com
VS-VSKEU300/12PbF
Vishay Semiconductors
HEXFRED^® Ultrafast Diodes, 300 A
(INT-A-PAK Power Modules)
INT-A-PAK
PRODUCT SUMMARY
V_R
V_F (typical) at 300 A at 25 °C
t_rr (typical) at 45 A
I_F(DC) at T_C
Package
Circuit
1200 V
2.18 V
233 ns
300 A at 60 °C
INT-A-PAK
Single diode
FEATURES
• Electrically isolated: DCB base plate
• Standard JEDEC^® package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• Case style INT-A-PAK
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
REMARKS
• Product reliability results valid for T_J = 150 °C
• Recommended operation temperature T_op = 150 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
V_R
Continuous forward current
I_F
Single pulse forward current
I_FSM
Maximum power dissipation
P_D
RMS isolation voltage
Junction temperature range
Storage temperature range
V_ISOL
T_J
T_Stg
TEST CONDITIONS
T_C = 25 °C
T_C = 60 °C
T_J = 25 °C
T_C = 25 °C
T_C = 60 °C
50 Hz, circuit to base, all terminal shorted, t = 1 s
VALUES
1200
375
300
2400
1040
750
3500
-40 to +150
-40 to +150
UNITS
V
A
W
V
°C
ELECTRICAL SPECIFICATIONS PER LEG (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Cathode to anode breakdown voltage
V_BR
Maximum forward voltage
V_FM
I_R = 500 μA
I_F = 300 A
I_F = 300 A, T_J = 150 °C
1200
-
-
2.18
-
2.24
Maximum reverse leakage current
V_R = 1200 V
I_RM
T_J = 150 °C, V_R = 1200 V
-
0.06
-
-
MAX.
-
2.23
2.47
0.2
20
UNITS
V
mA
Revision: 02-Dec-15
1
Document Number: 94670
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000