VS-VSKCU300 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Simplified mechanical designs, rapid assembly

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VS-VSKCU300/06PbF
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
T_J = 25 °C
-
Reverse recovery time
t_rr
T_J = 125 °C
-
Peak recovery current
Reverse recovery charge
T_J = 25 °C
I_rr
T_J = 125 °C
T_J = 25 °C
Q_rr
T_J = 125 °C
I_F = 50 A
-
dI/dt = 200 A/μs
-
V_R = 400 V (per leg)
-
-
Peak rate of recovery current
dI_(rec)M/dt T_J = 125 °C
-
Softness factor per leg
I_F = 50 A, T_J = 25 °C, dI/dt = 400 A/μs, V_R = 200 V
-
s
I_F = 50 A, T_J = 125 °C, dI/dt = 400 A/μs, V_R = 200 V
-
130
195
11
20
670
1800
-
0.2
0.22
MAX.
165
260
18
30
1485
3900
400
-
-
UNITS
ns
A
nC
A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
T_J, T_Stg
R_thJC
R_thCS
DC operation
Mounting surface, flat, smooth and greased
Mounting
torque ± 10 %
to heatsink
busbar
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow the spread of the compound.
Approximate weight
Case style
VALUES
-40 to +150
0.16
0.05
UNITS
°C
K/W
4 to 6
Nm
200
g
7.1
oz.
INT-A-PAK
1000
T_J = 150 °C
100
T_J = 25 °C
10
1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
93155_01
V_FM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
T_J = 150 °C
10
1
0.1
0.01
T_J = 25 °C
0.001
100
200
300
400
500
600
93155_02
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 11-Apr-14
2
Document Number: 93155
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