VS-VSKCU300 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Simplified mechanical designs, rapid assembly

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VS-VSKCU300/06PbF
Vishay Semiconductors
HEXFRED^® Ultrafast Diodes, 300 A
(INT-A-PAK Power Modules)
INT-A-PAK
PRODUCT SUMMARY
V_R
V_F (typical)
600 V
1.23
t_rr (typical)
130 ns
I_F(AV) at T_C
300 A at 48 °C
Package
INT-A-PAK
Circuit
Two diodes common cathode
FEATURES
• Electrically insulated by DBC ceramic
• 3500 V_RMS isolating voltage
• Standard JEDEC^® package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Case style INT-A-PAK
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912



ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
V_R
Continuous forward current per leg
I_F
Single pulse forward current
I_FSM
Maximum power dissipation per leg
P_D
Operating junction and storage
temperature range
RMS insulation voltage
T_J, T_Stg
V_INS
TEST CONDITIONS
T_C = 25 °C
T_C = 100 °C
Limited by junction temperature
T_C = 25 °C
T_C = 100 °C
50 Hz, circuit to base, 
all terminals shorted, t = 1 s
VALUES
600
435
230
TBD
781
313
-40 to +150
3500
UNITS
V
A
W
°C
V
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode breakdown voltage
V_BR
I_R = 500 μA
600
I_F = 150 A
-
I_F = 300 A
-
Forward voltage drop per leg
V_FM
I_F = 150 A, T_J = 125 °C
-
I_F = 300 A, T_J = 125 °C
-
Maximum reverse leakage current
I_RM
T_J = 150 °C, V_R = 600 V
-
TYP.
-
1.23
1.43
1.11
1.39
-
MAX.
-
1.53
1.96
1.29
1.73
50
UNITS
V
mA
Revision: 11-Apr-14
1
Document Number: 93155
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000