VS-ST1280C04K0 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Phase Control Thyristors

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VS-ST1280C..K Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at heatsink temperature
I_T(AV)
Maximum RMS on-state current
I_T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
I_TSM
Maximum I²t for fusing
I²t
Maximum I²âˆšt for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I²âˆšt
V_T(TO)1
V_T(TO)2
r_t1
r_t2
V_TM
I_H
I_L
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J = T_J maximum
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x I_T(AV) < I < π x I_T(AV)), T_J = T_J maximum
(I > π x I_T(AV)), T_J = T_J maximum
(16.7 % x π x I_T(AV) < I < π x I_T(AV)), T_J = T_J maximum
(I > π x I_T(AV)), T_J = T_J maximum
I_pk = 8000 A, T_J = T_J maximum, t_p = 10 ms sine pulse
T_J = 25 °C, anode supply 12 V resistive load
VALUES UNITS
2310 (885) A
55 (85)
°C
4150
42 500
44 500
A
35 700
37 400
9027
8241
6383
kA²s
5828
90 270 kA²âˆšs
0.83
V
0.90
0.077
mΩ
0.068
1.44
V
600
mA
1000
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dI/dt
t_d
t_q
TEST CONDITIONS
Gate drive 20 V, 20 Ω, t_r ≤ 1 μs
T_J = T_J maximum, anode voltage ≤ 80 % V_DRM
Gate current 1 A, dI_g/dt = 1 A/μs
V_d = 0.67 % V_DRM, T_J = 25 °C
I_TM = 550 A, T_J = T_J maximum, dI/dt = 40 A/μs,
V_R = 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, t_p = 500 μs
VALUES
1000
1.9
200
UNITS
A/μs
μs
SYMBOL
TEST CONDITIONS
dV/dt
I_RRM,
I_DRM
T_J = T_J maximum linear to 80 % rated V_DRM
T_J = T_J maximum, rated V_DRM/V_RRM applied
VALUES
500
UNIT
S
V/μs
100
mA
Revision: 18-Dec-13
2
Document Number: 93718
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