VS-MURB2020CTHM3 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Low forward voltage drop

VS-MURB2020CTHM3, VS-MURB2020CT-1HM3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
I_F = 1.0 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
19
Reverse recovery time
t_rr
T_J = 25 °C
-
21
T_J = 125 °C
-
35
Peak recovery current
I_RRM
T_J = 25 °C
I_F = 10 A
-
dI_F/dt = 200 A/μs
1.9
T_J = 125 °C
V_R = 160 V
-
4.8
Reverse recovery charge
T_J = 25 °C
Q_rr
T_J = 125 °C
-
25
-
78
MAX.
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
T_J, T_Stg
Thermal resistance,
junction to case per leg
R_thJC
Thermal resistance,
junction to ambient per leg
R_thJA
Thermal resistance,
case to heatsink
R_thCS
Mounting surface, flat, smooth and
greased
Weight
Mounting torque
Marking device
Case style D²PAK
Case style TO-262
MIN.
-65
-
-
-
-
-
6.0
(5.0)
TYP.
-
MAX.
175
-
2.5
-
50
0.5
-
2.0
-
0.07
-
12
-
(10)
MURB2020CTH
MURB2020CT-1H
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
Revision: 16-Jun-15
2
Document Number: 94807
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