VS-MURB2020CTHM3 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Low forward voltage drop

VS-MURB2020CTHM3, VS-MURB2020CT-1HM3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 2 x 10 A FRED Pt^®
VS-MURB2020CTHM3
VS-MURB2020CT-1HM3
D²PAK
Base
common
cathode
2
TO-262
Base
common
cathode
2
12
3
Anode
Anode
1 Common 2
cathode
12
3
Anode
Anode
1 Common 2
cathode
PRODUCT SUMMARY
Package
TO-263AB (D²PAK), TO-262AA
I_F(AV)
2 x 10 A
V_R
V_F at I_F
200 V
0.85
t_rr typ.
19 ns
T_J max.
175 °C
Diode variation
Common cathode
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Meets JESD 201 class 1 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
Average rectified forward current
per leg
total device
V_RRM
I_F(AV)
Non-repetitive peak surge current per leg
Peak repetitive forward current per leg
Operating junction and storage temperatures
I_FSM
I_FM
T_J, T_Stg
TEST CONDITIONS
Rated V_R, T_C = 145 °C
Rated V_R, square wave, 20 kHz, T_C = 145 °C
MAX.
200
10
20
100
20
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
V_BR,
V_R
I_R = 100 μA
200
I_F = 8 A, T_J = 125 °C
-
Forward voltage
V_F
I_F = 16 A
-
I_F = 16 A, T_J = 125 °C
-
V_R = V_R rated
-
Reverse leakage current
I_R
T_J = 150 °C, V_R = V_R rated
-
Junction capacitance
C_T
V_R = 200 V
-
Series inductance
L_S
Measured lead to lead 5 mm from package body
-
TYP.
-
-
-
-
-
-
55
8.0
MAX.
-
0.85
1.15
1.05
15
250
-
-
UNITS
V
μA
pF
nH
Revision: 16-Jun-15
1
Document Number: 94807
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000