VS-MURB1020CTHM3 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Low forward voltage drop

VS-MURB1020CTHM3, VS-MURB1020CT-1HM3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1.0 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
19
t_rr
T_J = 25 °C
-
24
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
35
I_F = 5 A
-
3.3
dI_F/dt = 200 A/μs
V_R = 160 V
-
5.0
-
33
-
76
MAX.
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage 
temperature range
T_J, T_Stg
Thermal resistance, 
junction to case per leg
R_thJC
Thermal resistance, 
junction to ambient per leg
R_thJA
Thermal resistance,
case to heatsink
R_thCS
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-263AB (D²PAK)
Case style TO-262AA
MIN.
-65
-
-
-
-
-
6.0
(5.0)
TYP.
-
MAX.
175
UNITS
°C
-
5
-
50
°C/W
0.5
-
2.0
-
0.07
-
12
-
(10)
MURB1020CTH
MURB1020CT-1H
g
oz.
kgf · cm
(lbf · in)
100
10
T_J = 175 °C
T_J = 125 °C
T_J = 25 °C
1
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_F - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
T_J = 175 °C
10
T_J = 150 °C
1
T_J = 125 °C
0.1
T_J = 100 °C
0.01
0.001
T_J = 25 °C
0.0001
0
40
80
120
160
200
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 02-Feb-16
2
Document Number: 95807
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