VS-MURB1020CTHM3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Low forward voltage drop

VS-MURB1020CTHM3, VS-MURB1020CT-1HM3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 2 x 5 A FRED Pt^®
TO-263AB (D²PAK)
Base
common
cathode
2
TO-262AA
Base
common
cathode
2
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Meets JESD 201 class 1 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1
2
3
Anode Common Anode
1 cathode 2
VS-MURB1020CTHM3
1
2
3
Anode Common Anode
1 cathode 2
VS-MURB1020CT-1HM3
PRODUCT SUMMARY
Package
TO-263AB (D²PAK), TO-262AA
I_F(AV)
2x5A
V_R
200 V
V_F at I_F
0.87
t_rr (typ.)
19 ns
T_J max.
175 °C
Diode variation
Common cathode
DESCRIPTION / APPLICATIONS
MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
per leg
total device
Non-repetitive peak surge current per leg
Peak repetitive forward current per leg
Operating junction and storage temperatures
SYMBOL
V_RRM
I_F(AV)
I_FSM
I_FM
T_J, T_Stg
TEST CONDITIONS
Rated V_R, T_C = 149 °C
Rated V_R, square wave, 20 kHz, T_C = 149 °C
MAX.
200
5
10
50
10
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
Series inductance
V_BR,
V_R
I_R = 100 μA
I_F = 5 A, T_J = 25 °C
V_F
I_F = 5 A, T_J = 125 °C
I_F = 10 A, T_J = 25 °C
I_F = 10 A, T_J = 125 °C
I_R
V_R = V_R rated
T_J = 150 °C, V_R = V_R rated
C_T
V_R = 200 V
L_S
Measured lead to lead 5 mm from package body
MIN.
200
-
-
-
-
-
-
-
-
TYP.
-
0.99
0.87
1.12
1.02
-
-
8
8.0
MAX. UNITS
-
1.08
V
0.99
1.25
1.20
10
μA
250
-
pF
-
nH
Revision: 02-Feb-16
1
Document Number: 95807
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000