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VS-MBRS320TRPBF Datasheet, PDF (2/7 Pages) Vishay Siliconix – Very low forward voltage drop
VS-MBRS320TRPbF
Vishay High Power Products Schottky Rectifier, 3.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum reverse leakage current
IRM (1)
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
3A
TJ = 25 °C
6A
3A
TJ = 125 °C
6A
TJ = 25 °C
TJ = 100 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
TYP.
0.41
0.45
0.29
0.35
0.04
8.0
23
360
3.0
-
MAX.
0.45
0.53
0.36
0.46
0.5
20
35
-
-
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to lead
RthJL (2) DC operation
Maximum thermal resistance,
junction to ambient
RthJA
TEST CONDITIONS
Approximate weight
Marking device
Case style SMC (similar to DO-214AB)
Notes
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
(2) Mounted 1" square PCB
VALUES
- 65 to 150
UNITS
°C
12
°C/W
46
0.24
g
0.008
oz.
V32
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2
For technical questions, contact: diodestech@vishay.com
Document Number: 94320
Revision: 05-Mar-10