VS-MBRB735-M3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – High frequency operation

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VS-MBRB735-M3, VS-MBRB745-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
V_FM ⁽¹⁾
Maximum instantaneous reverse current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
I_RM ⁽¹⁾
C_T
L_S
dV/dt
TEST CONDITIONS
15 A
7.5 A
15 A
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
Rated DC voltage
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz), 25 °C
Measured from top of terminal to mounting plane
Rated V_R
VALUES
0.84
0.57
0.72
0.1
15
400
8.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance, 
junction to case
Typical thermal resistance, 
case to heatsink
T_J
T_Stg
R_thJC
R_thCS
DC operation
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style D²PAK
VALUES
- 65 to 150
- 65 to 175
UNITS
°C
3.0
°C/W
0.50
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
MBRB735
MBRB745
Revision: 03-Mar-14
2
Document Number: 94956
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