VS-MBRB735-M3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – High frequency operation

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VS-MBRB735-M3, VS-MBRB745-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 7.5 A
Base
cathode
2
D²PAK
1
N/C
3
Anode
PRODUCT SUMMARY
I_F(AV)
V_R
V_F at I_F
I_RM
T_J max.
E_AS
Package
Diode variation
7.5 A
35 V, 45 V
0.57 V
15 mA at 125 °C
150 °C
7 mJ
TO-263AB (D²PAK)
Single die
FEATURES
• 150 °C T_J operation
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC^®-JESD 47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-MBRB7... Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
Rectangular waveform
t_p = 5 μs sine
V_F
7.5 A_pk, T_J = 125 °C
T_J
Range
VALUES
7.5
35/45
690
0.57
-65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VS-MBRB735-M3
35
VS-MBRB745-M3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
I_F(AV)
Non-repetitive peak surge current
I_FSM
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
VALUES
T_C = 131 °C, rated V_R
7.5
Following any rated load condition
5 μs sine or 3 μs rect. pulse
690
and with rated V_RRM applied
Surge applied at rated load condition halfwave single phase 60 Hz 150
T_J = 25 °C, I_AS = 2 A, L = 3.5 mH
7
Current decaying linearly to zero in 1 μs
2
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
UNITS
A
mJ
A
Revision: 03-Mar-14
1
Document Number: 94956
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000