VS-MBRA120TRPBF Datasheet, PDF (2/6 Pages) Vishay Siliconix – Low forward voltage drop

VS-MBRA120TRPbF
Vishay High Power Products ^{Schottky Rectifier, 1.0 A}
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
V_FM ⁽¹⁾
Maximum reverse leakage current
I_RM ⁽¹⁾
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
C_T
L_S
dV/dt
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
TEST CONDITIONS
1A
T_J = 25 °C
2A
1A
T_J = 100 °C
2A
1A
T_J = 125 °C
2A
T_J = 25 °C
T_J = 100 °C
V_R = Rated V_R
T_J = 125 °C
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
TYP.
0.42
0.46
0.33
0.39
0.30
0.36
0.015
2.0
7.0
110
2.0
-
MAX.
0.45
0.52
0.37
0.45
0.35
0.43
0.2
6.0
20
-
-
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
T_J ⁽¹⁾, T_Stg
Maximum thermal resistance,
junction to lead
R_thJL ⁽²⁾ DC operation
Maximum thermal resistance,
junction to ambient
R_thJA
TEST CONDITIONS
Approximate weight
Device marking
Case style SMA (similar D-64)
Notes
(1) ^d----P-----t_-^o_---^t _{< ------1-------- thermal runaway condition for a diode on its own heatsink}
dT_J R_thJA
(2) _{Mounted 1" square PCB}
VALUES
- 65 to 150
UNITS
°C
35
°C/W
80
0.07
g
0.002
oz.
V12A
www.vishay.com
2
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Document Number: 94300
Revision: 04-Mar-10