VS-MBRA120TRPBF Datasheet, PDF (1/6 Pages) Vishay Siliconix – Low forward voltage drop

VS-MBRA120TRPbF
Vishay High Power Products
Schottky Rectifier, 1.0 A
SMA
Cathode
Anode
PRODUCT SUMMARY
I_F(AV)
V_R
I_RM
1.0 A
20 V
20 mA at 125 °C
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Rectangular waveform
V_RRM
I_FSM
t_p = 5 μs sine
V_F
1.0 Apk, T_J = 125 °C
T_J
Range
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The VS-MBRA120TRPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
VALUES
1.0
20
310
0.34
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VS-MBRA120TRPbF
20
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
I_F(AV)
50 % duty cycle at T_L = 136 °C, rectangular waveform
1.0
5 μs sine or 3 μs rect. pulse ^{Following any rated load} 310
I_FSM
condition and with rated
10 ms sine or 6 ms rect. pulse _{VRRM applied}
40
E_AS
T_J = 25 °C, I_AS = 1 A, L = 4 mH
2.0
Current decaying linearly to zero in 1 μs
I_AR
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
1.0
UNITS
A
mJ
A
Document Number: 94300
Revision: 04-Mar-10
For technical questions, contact: [e-mail]
www.vishay.com
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