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VS-MBR3045CTPBF Datasheet, PDF (2/7 Pages) Vishay Siliconix – Schottky Rectifier
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VS-MBR3045CTPbF, VS-MBR3045CT-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum instantaneous reverse current
Threshold voltage
Forward slope resistance
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
VF(TO)
rt
CT
LS
dV/dt
30 A
20 A
30 A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
Rated DC voltage
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured from top of terminal to mounting plane
Rated VR
VALUES
0.76
0.6
0.72
1
100
0.29
13.6
800
8.0
10 000
UNITS
V
mA
V
m
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ
Maximum storage temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
TStg
RthJC
RthCS
DC operation
Mounting surface, smooth and greased
Only for TO-220
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
For D2PAK and TO-262
Approximate weight
Mounting torque
Marking device
minimum
maximum
Non-lubricated threads
Case style TO-220AB
VALUES
- 65 to 150
- 65 to 175
1.5
UNITS
°C
0.50
°C/W
50
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
MBR3045CT
Revision: 26-Aug-11
2
Document Number: 94292
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