English
Language : 

VS-MBR3045CTPBF Datasheet, PDF (1/7 Pages) Vishay Siliconix – Schottky Rectifier
www.vishay.com
VS-MBR3045CTPbF, VS-MBR3045CT-N3
Vishay Semiconductors
TO-220AB
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
Schottky Rectifier, 2 x 15 A
Base 2
common
cathode
Anode
2
Anode
1 Common 3
cathode
TO-220AB
2 x 15 A
45 V
See Electrical table
100 mA at 125 °C
150 °C
Common cathode
10 mJ
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFRM
IFSM
VF
TJ
Rectangular waveform (per device)
TC = 123 °C (per leg)
tp = 5 μs sine
20 Apk, TJ = 125 °C
Range
VALUES
30
35/45
30
1020
0.6
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
VRWM
VS-MBR3045CTPbF
45
VS-MBR3045CT-N3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
IF(AV)
Peak repetitive forward current per leg
IFRM
Non-repetitive peak surge current
IFSM
Non-repetitive avalanche energy per leg EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
TC = 123 °C, rated VR
Rated VR, square wave, 20 kHz, TC = 123 °C
Following any rated load
5 µs sine or 3 µs rect. pulse condition and with rated
VRRM applied
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
TJ = 25 °C, IAS = 2 A, L = 5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
15
30
30
1020
200
10
2
UNITS
A
mJ
A
Revision: 26-Aug-11
1
Document Number: 94292
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000