VS-HFA16TB120PBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – HEXFRED® Ultrafast Soft Recovery Diode, 16 A

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VS-HFA16TB120PbF, VS-HFA16TB120-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Cathode to anode
breakdown voltage
V_BR
I_R = 100 μA
I_F = 16 A
Maximum forward voltage
V_FM
I_F = 32 A
See fig. 1
I_F = 16 A, T_J = 125 °C
Maximum reverse
leakage current
V_R = V_R rated
I_RM
See fig. 2
T_J = 125 °C, V_R = 0.8 x V_R rated
Junction capacitance
Series inductance
C_T
V_R = 200 V
See fig. 3
Measured lead to lead 5 mm from package
L_S
body
MIN.
1200
-
-
-
-
-
-
-
TYP.
-
2.5
3.2
2.3
0.75
375
27
8.0
MAX.
-
3.0
3.93
2.7
20
2000
40
-
UNITS
V
μA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
See fig. 5 and 10
t_rr
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
t_rr1
T_J = 25 °C
t_rr2
T_J = 125 °C
-
30
-
90
-
164
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
I_RRM1
I_RRM2
Q_rr1
Q_rr2
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 16 A
dI_F/dt = 200 A/μs
V_R = 200 V
-
5.8
-
8.3
-
260
-
680
Peak rate of fall of
recovery current during t_b
See fig. 8
dI_(rec)M/dt1 T_J = 25 °C
dI_(rec)M/dt2 T_J = 125 °C
-
120
-
76
MAX.
-
135
245
10
15
675
1838
-
-
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
T_lead
R_thJC
R_thJA
0.063" from case (1.6 mm) for 10 s
Typical socket mount
Thermal resistance,
case to heatsink
R_thCS
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-220AC
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
0.83
UNITS
°C
-
80
K/W
0.50
-
2.0
-
0.07
-
12
-
(10)
HFA16TB120
g
oz.
kgf · cm
(lbf · in)
Revision: 18-Aug-11
2
Document Number: 94060
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