VS-HFA16TB120PBF Datasheet, PDF (1/8 Pages) Vishay Siliconix – HEXFRED® Ultrafast Soft Recovery Diode, 16 A

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VS-HFA16TB120PbF, VS-HFA16TB120-N3
Vishay Semiconductors
HEXFRED^®
Ultrafast Soft Recovery Diode, 16 A
TO-220AC
Base
cathode
2
1
3
Cathode Anode
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
t_rr typ.
T_J max.
Diode variation
TO-220AC
16 A
1200 V
3.0 V
30 ns
150 °C
Single die
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I_RRM and Q_rr
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to
JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21
definition (-N3 only)
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA16TB120... is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 16 A continuous current,
the VS-HFA16TB120... is especially well suited for use as
the companion diode for IGBTs and MOSFETs. In addition
to ultrafast recovery time, the HEXFRED^® product line
features extremely low values of peak recovery current
(I_RRM) and does not exhibit any tendency to “snap-off”
during the t_b portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help
to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA16TB120... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
SYMBOL
V_R
I_F
I_FSM
I_FRM
Maximum power dissipation
P_D
Operating junction and storage temperature range T_J, T_Stg
TEST CONDITIONS
T_C = 100 °C
T_C = 25 °C
T_C = 100 °C
VALUES
1200
16
190
64
151
60
- 55 to + 150
UNITS
V
A
W
°C
Revision: 18-Aug-11
1
Document Number: 94060
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