VS-HFA04SD60SHM3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Ultrasoft recovery

www.vishay.com
VS-HFA04SD60SHM3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
V_BR,
V_R
I_R = 100 μA
Forward voltage
See fig. 1
I_F = 4 A
V_F
I_F = 8 A
I_F = 4 A, T_J = 125 °C
Maximum reverse
leakage current
V_R = V_R rated
I_R
T_J = 125 °C, V_R = 0.8 x V_R rated
Junction capacitance
C_T
V_R = 200 V
Series inductance
L_S
Measured lead to lead 5 mm from package body
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.5
1.8
1.4
0.17
44
4
8.0
MAX.
-
1.8
2.2
1.7
3.0
300
8
-
UNITS
V
μA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (T_C = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
I_F = 1.0 A, dI_F/dt = 200 A/μA, V_R = 30 V
-
17
Reverse recovery time
t_rr
T_J = 25 °C
T_J = 125 °C
-
28
-
38
Peak recovery current
Reverse recovery charge
I_RRM
Q_rr
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 4 A
dI_F/dt = 200 A/μs
V_R = 200 V
-
2.9
-
3.7
-
40
-
70
Rate of fall of recovery current dI_(rec)M/dt
T_J = 25 °C
T_J = 125 °C
-
280
-
235
MAX.
-
42
57
5.2
6.7
60
105
-
-
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
T_J, T_Stg
Thermal resistance,
junction to case
R_thJC
Thermal resistance,
junction to ambient
R_thJA
Typical socket mount
Weight
Mounting torque
Marking device
Case style TO-252AA (D-PAK)
MIN.
-55
-
-
-
-
6.0
(5.0)
TYP.
-
MAX.
150
UNITS
°C
-
5.0
-
80
2.0
-
0.07
-
12
-
(10)
HFA04SD60SH
°C/W
g
oz.
kgf · cm
(lbf ⋅ in)
Revision: 15-Jul-15
2
Document Number: 94756
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000